| PART |
Description |
Maker |
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| MC-242443F9-B10-BT3 MC-242443F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
| MB82DP02183D MB82DP02183D-65LWT |
32M Bit (2 M word 】 16 bit) Mobile Phone Application Specific Memory
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB82DP02183F-65LTBG MB82DP02183F-65L MB82DP02183F |
MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| MX25L3235DZNI-10G MX25L3235D MX25L3235DM2I-10G MX2 |
32M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH
|
Macronix International
|
| MX25L3208EZNI12G MX25L3208EM2I12G |
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| MX25L3205A |
32M-BIT [x 1] CMOS SERIAL eLiteFlash MEMORY
|
Macronix International
|
| MX25L3205MC-20 MX25L3205 MX25L3205MC-20G MX25L3205 |
32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
| KM23C32005BG |
32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
